Mohamad Arifin, Nurliyana (2023) High transmittance-n-TiO2/ZnO bilayer deposited by sol-gel spin coating method for electrodeposited-p-Cu2O based heterojunction thin film solar cell. Doctoral thesis, Universiti Tun Hussein Onn Malaysia.

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Abstract

Metal oxide semiconductor heterojunction are gaining interest in current fundamental photovoltaic research. Copper oxide (Cu2O) based heterojunction which consists of p- Cu2O and n-Titanium dioxide (TiO2) have been spotted as a potential window and absorbing layer, respectively. However, n-TiO2 suffers low utilization in solar spectrum and high recombination rate of electron and holes. By coupling TiO2 and Zinc oxide (ZnO) thin film, the layers are known as n-TiO2/ZnO bilayer thin film which can enhance utilization of solar spectrum as a window layer. Due to low lattice mismatch between ZnO and Cu2O, high crystal structure with (002)ZnO/(111)Cu2O preferred orientation plane is essential to improve the heterointerface layer. Both combination layers exhibited a similar atomic arrangement at the interface due to the crystal structure of n-ZnO and p-Cu2O are hexagonal wurtzite and cubic, respectively. Herein, n-TiO2/ZnO/p-Cu2O heterojunction thin film was successfully fabricated onto FTO substrate by using sol-gel spin coating and electrodeposition method. Annealing treatment affected process in fabricating n-TiO2/ZnO bilayer thin film with different annealing temperature and time. Meanwhile, cyclic voltammetry was executed to obtain the most optimized parameter before p-Cu2O stacking onto n-TiO2/ZnO bilayer thin film with different bath temperature and deposition time. Based on the findings, the preferred (002)-ZnO orientation plane of thin film appeared at 34.28º in n- TiO2/ZnO bilayer thin film when annealed for 2 hours at 500 ℃. High transmittance of n-TiO2/ZnO bilayer thin film was achieved up to 80% at the edge of the visible light spectrum in the range of 450-300 nm. High crystal structure and absorbance spectrum of p-Cu2O as absorbing layer was observed at bath temperature 40 ℃ for 1.5 hours. Pn junction was successfully formed as indicated by significant electrical rectification properties with conversion efficiency of 0.0615%. The results prove the homogeneity, high transmittance and crystallinity of n-TiO2/ZnO/p-Cu2O heterojunction thin film aside from enhancing the surface structure and atomic arrangement at its heterointerface which will be beneficial for solar cell application

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